| Part Number | 2SD357 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 ·Minimum Lot-to-Lot variations for r... |
| Features |
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A
VBE(on) Base-Emitter On Voltage
IC= 0.05; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
ICEO
Col...
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| Datasheet |
 2SD357 Datasheet 211.52KB |
