Part Number | 2SD2558 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation... |
Features |
ITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA
ICBO
Collector Cutoff current
VCB= 200V, IE= 0
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
hFE
DC Current Gain
...
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Datasheet | 2SD2558 Datasheet |