logo

2SD226

INCHANGE
Part Number 2SD226
Manufacturer INCHANGE
Title NPN Transistor
Description ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p...
Features 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 ICBO Collector Base Cutoff Current VCB=50V; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VBE(ON) Base-Emitter On ...

Datasheet PDF File 2SD226 Datasheet

2SD226   2SD226   2SD226  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map