| Part Number | 2SD2162 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High hFE due to Darlington connection : HFE ≥ 2,000 @(VCE = 2.0 V, IC = 3.0 A) ·Low Collector Saturation Voltage- : VCE(sat) ≤1.5V @ (IC=3A, IB= ... |
| Features |
ss otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
hFE-1
DC Current Gain
...
|
| Datasheet |
 2SD2162 Datasheet 224.94KB |
