| Part Number | 2SD2107 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
r-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On V...
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| Datasheet |
 2SD2107 Datasheet
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