| Part Number | 2SD1763 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SB1186 ·Minimum Lot-to-Lot variation... |
| Features |
O Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB...
|
| Datasheet |
 2SD1763 Datasheet
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