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2SD1655

INCHANGE
Part Number 2SD1655
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance ...
Features )EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff...

Datasheet PDF File 2SD1655 Datasheet

2SD1655   2SD1655   2SD1655  




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