| Part Number | 2SD1632 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust dev... |
| Features |
sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 3A; IB= 1A
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
IC= 3A; VCE= 10V
VECF
C-E Diode Forward Volt...
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| Datasheet |
 2SD1632 Datasheet 207.24KB |
