Part Number | 2SD1619 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) ·Complement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
Features |
A; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=-10uA ,IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB=...
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Datasheet | 2SD1619 Datasheet |