| Part Number | 2SD1439 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.75A
1.5
V
hFE
DC Current Gain
IC= 2A ; VCE= 10V
4
12
...
|
| Datasheet |
 2SD1439 Datasheet
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