logo

2SD1427

INCHANGE
Part Number 2SD1427
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device perf...
Features ONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V hFE DC Current Gain ...

Datasheet PDF File 2SD1427 Datasheet

2SD1427   2SD1427   2SD1427  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map