| Part Number | 2SD1426 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage ·High Switching Speed ·Built-in damper diode ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.8A
1.5
V
hFE
...
|
| Datasheet |
 2SD1426 Datasheet 211.79KB |
