| Part Number | 2SD1409A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot varia... |
| Features |
HARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
...
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| Datasheet |
 2SD1409A Datasheet
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