logo

2SD1399

INCHANGE
Part Number 2SD1399
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performa...
Features oltage IC=30mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 5.0 V 1.5 V hFE DC Current G...

Datasheet PDF File 2SD1399 Datasheet

2SD1399   2SD1399   2SD1399  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map