| Part Number | 2SD1376 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Vo... |
| Features |
O Collector-Emitter Breakdown Voltage IC= 10mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ,IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 1.5mA
VBE...
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| Datasheet |
 2SD1376 Datasheet
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