| Part Number | 2SD1360 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current ... |
| Features |
CTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.04A
2.0
V
VBE(sat) B...
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| Datasheet |
 2SD1360 Datasheet 187.21KB |
