| Part Number | 2SD1301 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VEBO
Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
5.0
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff...
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| Datasheet |
 2SD1301 Datasheet
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