| Part Number | 2SD1279 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 8.0A ·Fast Switching Speed ·10... |
| Features |
ise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat) Base-Emitter ...
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| Datasheet |
 2SD1279 Datasheet 186.92KB |
