| Part Number | 2SD1263 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
| Features |
or-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(on) Base-Emitter...
|
| Datasheet |
 2SD1263 Datasheet
|
