| Part Number | 2SD1230 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 ... |
| Features |
pecified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA
VBE(sat) Base-Emitter Sa...
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| Datasheet |
 2SD1230 Datasheet 217.00KB |
