| Part Number | 2SD1229 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min.)@ IC= 5A, VCE= 2V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·Complement to Type 2SB912 ·... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 10mA
VBE(sat) Base-Emitter Sat...
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| Datasheet |
 2SD1229 Datasheet
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