| Part Number | 2SD1185 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
n Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICES
Collector Cutoff Current
VCE= 1200V; RBE= 0
hFE
DC Current Gain
IC= 0.3A; VCE= 5V
tf
Fall Time
tstg
Storage Time
IC= 4A, IB1= 0.8A, IB2= 2A
2SD118...
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| Datasheet |
 2SD1185 Datasheet 198.51KB |
