| Part Number | 2SD1183 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
MAX UNIT
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Vol...
|
| Datasheet |
 2SD1183 Datasheet
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