| Part Number | 2SD1180 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package ·Minimum Lot-to-Lot varia... |
| Features |
d
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-base breakdown voltage
IC=100µA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturati...
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| Datasheet |
 2SD1180 Datasheet 179.38KB |
