| Part Number | 2SC3060 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations... |
| Features |
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞
850
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1 mA; IE= 0
1200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter ...
|
| Datasheet |
 2SC3060 Datasheet
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