| Part Number | 2SC1986 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Silicon NPN tripe diffused mesa ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variation... |
| Features |
IC= 3A; IB= 300mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 500mA; VCE= 12V
MIN TYP. MAX UNIT
80
V
1.0
V
1
m...
|
| Datasheet |
 2SC1986 Datasheet 181.54KB |
