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2SC1975

INCHANGE
Part Number 2SC1975
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst overload conditions. ·100% avalanche tested ·Minimum Lot-to-Lot variation...
Features ollector- Emitter Breakdown Voltage IC=2mA ; RBE=100Ω 90 V VEBO Emitter-Base Breakdown Voltage IE=10uA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICEO Collector Cutoff Current VCB= 40V ; IE= 0 1 V 1.0 μA ...

Datasheet PDF File 2SC1975 Datasheet

2SC1975   2SC1975   2SC1975  




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