Part Number | 2SC1975 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) ·Withstands worst overload conditions. ·100% avalanche tested ·Minimum Lot-to-Lot variation... |
Features |
ollector- Emitter Breakdown Voltage IC=2mA ; RBE=100Ω
90
V
VEBO
Emitter-Base Breakdown Voltage
IE=10uA ; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
ICEO
Collector Cutoff Current
VCB= 40V ; IE= 0
1
V
1.0 μA
...
|
Datasheet | 2SC1975 Datasheet |