Part Number | 2SB899 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.2(Max.) @IC= -3A ·100% avalanche tes... |
Features |
S
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICBO ...
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Datasheet | 2SB899 Datasheet |