| Part Number | 2SB816 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 ·Mini... |
| Features |
kdown Voltage IC= -30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on) Base -Emitter On Voltag...
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| Datasheet |
 2SB816 Datasheet
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