| Part Number | 2SB765 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturatio... |
| Features |
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50mA , IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A, IB= -3mA
VCE(sat)-2 Collector-Emitter Satur...
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| Datasheet |
 2SB765 Datasheet
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