| Part Number | 2SB681 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
E(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
ICEO
Collector Cutoff Current
VCE= -120V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -5A ; VCE= -5V
...
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| Datasheet |
 2SB681 Datasheet
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