| Part Number | 2SB676 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation V... |
| Features |
CS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA
VBE(sat)) Base-Emitter Saturation Voltage
IC= -3A ,...
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| Datasheet |
 2SB676 Datasheet
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