logo

2SB673

INCHANGE
Part Number 2SB673
Manufacturer INCHANGE
Title PNP Transistor
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage-...
Features ecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA VBE(sat) Bas...

Datasheet PDF File 2SB673 Datasheet 210.31KB

2SB673   2SB673   2SB673  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map