| Part Number | 2SB669 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= -1A ·Low Saturation Voltage ·Minimum Lot-t... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -2mA; IC= 0
V(BR)CBO Collector-Base breakdown voltage
IC=...
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| Datasheet |
 2SB669 Datasheet 181.26KB |
