| Part Number | 2SB655 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD675 ·Minimum L... |
| Features |
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
hFE-1
DC Current Gain
IC= -1A...
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| Datasheet |
 2SB655 Datasheet
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