| Part Number | 2SB645 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum L... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Coll...
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| Datasheet |
 2SB645 Datasheet 208.70KB |
