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2SB638

INCHANGE
Part Number 2SB638
Manufacturer INCHANGE
Title PNP Transistor
Description ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE =1000 (Min) @ IC = -5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(M...
Features INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ; IB= ...

Datasheet PDF File 2SB638 Datasheet

2SB638   2SB638   2SB638  




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