logo

2SB632

INCHANGE
Part Number 2SB632
Manufacturer INCHANGE
Title PNP Transistor
Description ·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min) ·Good Linearity of hFE ·Complement to Type 2SD612...
Features ETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -10μA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC...

Datasheet PDF File 2SB632 Datasheet

2SB632   2SB632   2SB632  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map