Part Number | 2SB632 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·High Collector Current-IC=-2.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-25V(Min) ·Good Linearity of hFE ·Complement to Type 2SD612... |
Features |
ETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -10μA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -10μA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC...
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Datasheet | 2SB632 Datasheet |