| Part Number | 2SB630 |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
ation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -5mA; VCE= -10V
hFE-2
...
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| Datasheet |
 2SB630 Datasheet 219.56KB |
