Part Number | 2SB1481 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturat... |
Features |
n PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= ...
|
Datasheet | 2SB1481 Datasheet |