| Part Number | 2SB1186 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 ·Minimum Lot-to-Lot variatio... |
| Features |
RAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
-120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
-120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
-5
V
VCE...
|
| Datasheet |
 2SB1186 Datasheet
|
