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125N10T

INCHANGE
Part Number 125N10T
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V; ID= 40A...
Features ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 125N10T
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage ...

Datasheet PDF File 125N10T Datasheet

125N10T   125N10T   125N10T  




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