| Part Number | Y27US08121M |
| Manufacturer | Hynix Semiconductor |
| Title | HY27US08121M |
| Description | of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interf... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data
www.DataSheet4U.com - Pinout compatib...
|
| Datasheet |
 Y27US08121M Datasheet 796.67KB |
