| Part Number | PF01412A |
| Manufacturer | Hitachi Semiconductor |
| Title | MOS FET Power Amplifier Module for E-GSM Handy Phone |
| Description | PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application • For GSM class4 890 to 915 ... |
| Features |
• • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G ... |
| Datasheet |
 PF01412A Datasheet
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