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HE8812SG

Hitachi Semiconductor
Part Number HE8812SG
Manufacturer Hitachi Semiconductor
Title GaAlAs Infrared Emitting Diode
Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide ra...
Features
• High efficiency and high output power Package Type
• HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 ...

Datasheet PDF File HE8812SG Datasheet

HE8812SG   HE8812SG   HE8812SG  




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