| Part Number | 4AM17 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N/P-Channel/P-Channel Power MOS FET Array |
| Description | 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R... |
| Features |
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices. • High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 ... |
| Datasheet |
 4AM17 Datasheet
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