| Part Number | 3SK321 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Dual Gate MOS FET |
| Description | 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF ... |
| Features |
• Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) It... |
| Datasheet |
 3SK321 Datasheet 59.20KB |
