| Part Number | 3SK295 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Dual Gate MOS FET |
| Description | 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. ... |
| Features |
• Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage ... |
| Datasheet |
 3SK295 Datasheet 51.38KB |
