| Part Number | 3SK290 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Dual Gate MOS FET |
| Description | 3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. ... |
| Features |
· Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to sourc... |
| Datasheet |
 3SK290 Datasheet 90.76KB |
