| Description | 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B (Z) 3rd.Edition. June 1999 Features • Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volt... |
| Features |
• Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak cu... |
| Datasheet |
 2SJ574 Datasheet - 39.95KB |
